Silicon material is quite possibly the most well-known material utilizing in semiconductor industry because of its great exhibition as far as material construction, mechanical strength, synthetic and electrical strong qualities. A decent imperfection control on silicon material is inescapable and a decent surface deformity metrology is unavoidable in the silicon wafer fabricating. There are three kinds of surface imperfections characterized in the silicon wafer producing, as indicated by the wellspring of those absconds. Precious stone filled in deformity, for example, the Crystal Originated Particles (COPs) that is the opportunity sort of point imperfection outlined on the wafer surface which impacts the nature of gadget execution the most, for example, causing Gate Oxide Integrity (GOI) disappointment.